AlN semiconductor submount

Trusee can provides AlN semiconductor submount with high thermal conductivity, to provide solutions for heat dissipation of high power semiconductor laser diode, electrode connection, solder preset and assembly positioning.

Product description

Trusee can provide high thermal conductivity submount for COS packaged semiconductor laser. With good quality and stability, our products provide solutions for the heat dissipation of high power semiconductor laser chips, the connection of the electrode, the preset of the solder and the positioning of the assembly.

– Substrate:AlN、BeO、SiC etc

– Dimension:customizable

– Metallization:Cu/Ni/Au, Cu thickness 75μm ± 15 μm,Au suit for wire bonding,other layers can be customized

– AuSn layer:Au(75±5wt%)Sn,proportion and thickness can be customized

– Graphic accuracy:±30 μm

Substrate          / AlN BeO
Thermal conductivity W/(m·K) >200 >230 >250
Roughness μm <0.3 <0.3 <0.3
CTE 40 ~ 400 ℃ ×10-6/K 4.6 4.6 6.8
40 ~ 800 ℃ ×10-6/K 5.2 5.2 8.4
Thickness mm 0.25 ~ 1.5 ± 10%